Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by 
synchrotron-radiation photoemission spectroscopy

Ding, S. A.; Barman, Sudipto Roy; Horn, Karsten; Yang, H.; Yang, B.; Brandt, O.; Ploog, K.

doi:10.1063/1.118886

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Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy

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Ding, S. A.
Fritz Haber Institute, Max Planck Society;

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Barman, Sudipto Roy
Fritz Haber Institute, Max Planck Society;

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Horn, Karsten
Fritz Haber Institute, Max Planck Society;

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Citation

Ding, S. A., Barman, S. R., Horn, K., Yang, H., Yang, B., Brandt, O., et al. (1997). Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy. Applied Physics Letters, 70(18), 2407-2409. doi:10.1063/1.118886.

Cite as: https://hdl.handle.net/21.11116/0000-0008-7952-4

Abstract

The valence band discontinuity of the _n-type cubic GaN/GaAs heterojunction is measured by means of angle-resolved photoemission spectroscopy using synchrotron radiation. High quality cubic GaN films are grown on GaAs(100) substrates by nitrogen plasma-assisted molecular beam epitaxy, and the valence band discontinuity is determined by a combination of core and valence level spectra. A value of ΔE_V=(1.84±0.1) eV across the GaN/GaAs heterojunction is obtained, which means that the discontinuity in the conduction bands at this interface is very small, such that a vertical contact scheme may be realized for GaN/GaAs heterojunctions.