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Photochemical routes to silicon epitaxy

MPS-Authors
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Dippel,  Olaf
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Wright,  S.
Fritz Haber Institute, Max Planck Society;

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Hasselbrink,  Eckart
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Dippel, O., Wright, S., & Hasselbrink, E. (1997). Photochemical routes to silicon epitaxy. Journal of Vacuum Science and Technology A, 15(3), 1135-1139. doi:10.1116/1.580443.


Cite as: https://hdl.handle.net/21.11116/0000-0008-8042-C
Abstract
The photochemistry of Si2H6 adsorbed on a hydrogen terminated silicon surface and the subsequentreactions of the photolysis products were investigated using high resolution electron energy lossspectroscopy and by measuring time-of-flight distributions with a mass spectrometer. The crackingpattern of the products ejected directly into the gas phase without colliding with either the surfaceor other molecules indicates that the primary photolysis channels yield mostly fragments thatcontain one silicon atom. It is likely that silicon is added to the surface by insertion of SiH2 radicalsinto Si–H bonds at the surface but there is little evidence for reactions that remove excess hydrogenfrom the surface at 110 K