Electron-Lattice Interaction on α−Ga(010)

Hofmann, Philip; Cai, Y. Q.; Grütter, Ch.; Bilgram, J. H.

doi:10.1103/PhysRevLett.81.1670

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Electron-Lattice Interaction on α−Ga(010)

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Hofmann, Philip
Fritz Haber Institute, Max Planck Society;
Institute for Storage Ring Facilities, University of Aarhus;

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Cai, Y. Q.
Theory, Fritz Haber Institute, Max Planck Society;

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Citation

Hofmann, P., Cai, Y. Q., Grütter, C., & Bilgram, J. H. (1998). Electron-Lattice Interaction on α−Ga(010). Physical Review Letters, 81(8), 1670-1673. doi:10.1103/PhysRevLett.81.1670.

Cite as: https://hdl.handle.net/21.11116/0000-0008-B487-4

Abstract

We have investigated the (010) surface of α−Ga by angle-resolved photoemission and low energy electron diffraction. We find a surface state around the ¯C point of the surface Brillouin zone. The electron-phonon coupling at this surface is very strong with an electron-phonon mass enhancement parameter of λ=1.4±0.10. Our spectra show high background intensity in a projected bulk band gap which cannot be accounted for by defect scattering and is therefore interpreted as indicating a nonquasiparticle behavior. Upon cooling the sample below 220 K we observe a phase transition accompanied by spectral changes near the Fermi level.