English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states

MPS-Authors
/persons/resource/persons252941

Neuhold,  Georg
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21640

Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

PhysRevB.57.8945.pdf
(Publisher version), 379KB

Supplementary Material (public)
There is no public supplementary material available
Citation

Magnusson, K. O., Neuhold, G., Horn, K., & Evans, D. A. (1998). Electronic band structure of cubic CdSe determined by angle-resolved photoemission: Cd 4d and valence-level states. Physical Review B, 57(15), 8945-8950. doi:10.1103/PhysRevB.57.8945.


Cite as: https://hdl.handle.net/21.11116/0000-0008-B467-9
Abstract
The valence-band structure of epitaxially grown cubic CdSe along the Γ−K−X direction is determined experimentally using angle-resolved photoelectron spectroscopy on the basis of the free-electron final band model. In the upper valence band the three main branches are determined from normal emission spectra over the range from 15 to 90 eV photon energy, and are found to conform with the general shape expected from this class of materials. The Cd 4d level exhibits considerable dispersion, which is reflected in the spectra. The experimental bands are compared with several calculations based on different schemes, and best agreement with respect to dispersion and binding energies is found for a calculation that takes into account electron self-interaction and relaxation.