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Journal Article

Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction

MPS-Authors
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Baumgärtel,  Peter
Fritz Haber Institute, Max Planck Society;

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Paggel,  Jens
Fritz Haber Institute, Max Planck Society;

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Hasselblatt,  Markus
Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

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Fernandez,  V.
Fritz Haber Institute, Max Planck Society;

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Schaff,  Oliver
Fritz Haber Institute, Max Planck Society;

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Weaver,  J. H.
Fritz Haber Institute, Max Planck Society;

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Bradshaw,  Alexander M.
Fritz Haber Institute, Max Planck Society;

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PhysRevB.59.13014.pdf
(Publisher version), 403KB

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Citation

Baumgärtel, P., Paggel, J., Hasselblatt, M., Horn, K., Fernandez, V., Schaff, O., et al. (1999). Structure determination of the (√3×√3)R30° boron phase on the Si(111) surface using photoelectron diffraction. Physical Review B, 59(20), 13014-13019. doi:10.1103/PhysRevB.59.13014.


Cite as: https://hdl.handle.net/21.11116/0000-0008-C8E4-5
Abstract
A quantitative structural analysis of the system Si(111)(√3×√3)R30°−B has been performed using photoelectron diffraction in the scanned energy mode. We confirm that the substitutional S5 adsorption site is occupied and show that the interatomic separations to the three nearest-neighbor Si atoms are 1.98(±0.04)Å, 2.14(±0.13)Å, and 2.21(±0.12)Å. These correspond to the silicon atom immediately below the boron atom, the adatom immediately above, and the three atoms to which it is coordinated symmetrically in the first layer.