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Abstract

Topological magnetic semimetals, like Co₃Sn₂S₂ and Co₂MnGa, display exotic transport properties, such as large intrinsic anomalous (AHE) due to uncompensated Berry curvature. The highly symmetric XPt₃ compounds exhibit anti-crossing gapped nodal lines, a driving mechanism in the intrinsic Berry curvature Hall effects. Uniquely, these compounds contain two sets of gapped nodal lines that harmoniously dominate the Berry curvature in this complex multi band system. We calculate a maximum AHE of 1965Scm^-1 in the CrPt₃ by first principles electronic structure. We have grown high-quality CrPt₃ thin films with perpendicular magnetic anisotropy by magnetron sputtering and measured a robust AHE of 1750Scm^-1 for different sputtering growth conditions. Additionally, the cubic films display an easy magnetic axis along [111] direction. The facile and scalable fabrication of these materials is prime candidates for integration into topological devices.