Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

Piva, Mario M.; Rahn, Marein C.; Thomas, Sean M.; Scott, Brian L.; Pagliuso, Pascoal G.; Thompson, Joe D.; Schoop, Leslie M.; Ronning, Filip; Rosa, Priscila F. S.

doi:10.1021/acs.chemmater.1c00797

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Robust Narrow-Gap Semiconducting Behavior in Square-Net La₃Cd₂As₆

MPS-Authors

/persons/resource/persons248721

Piva, Mario M.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Piva, M. M., Rahn, M. C., Thomas, S. M., Scott, B. L., Pagliuso, P. G., Thompson, J. D., et al. (2021). Robust Narrow-Gap Semiconducting Behavior in Square-Net La₃Cd₂As₆. Chemistry of Materials, 33, 4122-4127. doi:10.1021/acs.chemmater.1c00797.

Cite as: https://hdl.handle.net/21.11116/0000-0008-E953-4

Abstract

Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors. © 2021 American Chemical Society.