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Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6

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Piva,  Mario M.
Physics of Quantum Materials, Max Planck Institute for Chemical Physics of Solids, Max Planck Society;

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Citation

Piva, M. M., Rahn, M. C., Thomas, S. M., Scott, B. L., Pagliuso, P. G., Thompson, J. D., et al. (2021). Robust Narrow-Gap Semiconducting Behavior in Square-Net La3Cd2As6. Chemistry of Materials, 33, 4122-4127. doi:10.1021/acs.chemmater.1c00797.


Cite as: http://hdl.handle.net/21.11116/0000-0008-E953-4
Abstract
Narrow-gap semiconductors are sought-after materials due to their potential for long-wavelength detectors, thermoelectrics, and more recently nontrivial topology. Here, we report the synthesis and characterization of a new family of narrow-gap semiconductors, R3Cd2As6 (R = La and Ce). Single-crystal X-ray diffraction at room temperature reveals that the As square nets distort and Cd vacancies order in a monoclinic superstructure. A putative charge-density ordered state sets in at 279 K in La3Cd2As6 and at 136 K in Ce3Cd2As6 and is accompanied by a substantial increase in the electrical resistivity in both compounds. The resistivity of the La member increases by 13 orders of magnitude on cooling, which points to a remarkably clean semiconducting ground state. Our results suggest that light square-net materials within an I4/mmm parent structure are promising clean narrow-gap semiconductors. © 2021 American Chemical Society.