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Journal Article

The Breathing-Mode Distortion around Transition-Metal Defects in Semiconductors

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Biernacki,  S. W.
Theory, Fritz Haber Institute, Max Planck Society;
Institute of Physics, Polish Academy of Sciences;

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Schulz,  Hans-Joachim
Inorganic Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Biernacki, S. W., & Schulz, H.-J. (1997). The Breathing-Mode Distortion around Transition-Metal Defects in Semiconductors. Physica Status Solidi B, 200(1), 173-180. doi:10.1002/1521-3951(199703)200:1<173:AID-PSSB173>3.0.CO;2-3.


Cite as: https://hdl.handle.net/21.11116/0000-0008-DD72-F
Abstract
The breathing-type distortion around transition-metal ions incorporated into semiconductors is determined in the approximation where the ligands are treated as point charges. It is shown how the crystal-field parameter can be found along with the value of the breathing-mode distortion energy from zero-phonon line measurements. The change of the transition-metal–ligand distance with respect to the equilibrium distance of the perfect crystal is also calculated.