Noncollinear antiferromagnetic Mn3Sn films

Markou, A.; Taylor, J. M.; Kalache, A.; Werner, P.; Parkin, S. S. P.; Felser, C.

doi:10.1103/PhysRevMaterials.2.051001

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Noncollinear antiferromagnetic Mn₃Sn films

MPS-Authors

Taylor, J. M.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

Werner, P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin, S. S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1103/PhysRevMaterials.2.051001
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Citation

Markou, A., Taylor, J. M., Kalache, A., Werner, P., Parkin, S. S. P., & Felser, C. (2018). Noncollinear antiferromagnetic Mn₃Sn films. Physical Review Materials, 2: 051001. doi:10.1103/PhysRevMaterials.2.051001.

Cite as: https://hdl.handle.net/21.11116/0000-0008-F0AF-4

Abstract

Noncollinear hexagonal antiferromagnets with almost zero net magnetization were recently shown to demonstrate giant anomalous Hall effect. Here, we present the structural and magnetic properties of noncollinear antiferromagnetic Mn₃Sn thin films heteroepitaxially grown on Y:ZrO₂ (111) substrates with a Ru underlayer. The Mn₃Sn films were crystallized in the hexagonal D0₁₉ structure with c-axis preferred (0001) crystal orientation. The Mn3Sn films are discontinuous, forming large islands of approximately 400 nm in width, but are chemical homogeneous and characterized by near perfect heteroepitaxy. Furthermore, the thin films show weak ferromagnetism with an in-plane uncompensated magnetization of M=34 kA/m and coercivity of μ₀H_c=4.0 mT at room temperature. Additionally, the exchange bias effect was studied in Mn₃Sn/Py bilayers. Exchange bias fields up to μ₀H_EB=12.6 mT can be achieved at 5 K. These results show Mn₃Sn films to be an attractive material for applications in antiferromagnetic spintronics.