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Journal Article

A Simplified Method for Patterning Graphene on Dielectric Layers

MPS-Authors
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Prieto,  Mauricio
Interface Science, Fritz Haber Institute, Max Planck Society;

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Gottlob,  Daniel M.
Interface Science, Fritz Haber Institute, Max Planck Society;

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Tanase,  Liviu Cristian
Interface Science, Fritz Haber Institute, Max Planck Society;

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Caldas,  Lucas de Souza
Interface Science, Fritz Haber Institute, Max Planck Society;

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Schmidt,  Thomas
Interface Science, Fritz Haber Institute, Max Planck Society;

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Fulltext (public)

acsami.1c09987-1.pdf
(Publisher version), 6MB

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Citation

Røst, H. I., Reed, B. P., Strand, F. S., Durk, J. A., Evans, A., Grubišić-Čabo, A., et al. (2021). A Simplified Method for Patterning Graphene on Dielectric Layers. ACS Applied Materials and Interfaces, 13(31), 37510-37516. doi:10.1021/acsami.1c09987.


Cite as: http://hdl.handle.net/21.11116/0000-0008-F81A-4
Abstract
The large-scale formation of patterned, quasi-freestanding graphene structures supported on a dielectric has so far been limited by the need to transfer the graphene onto a suitable substrate and contamination from the associated processing steps. We report μm scale, few-layer graphene structures formed at moderate temperatures (600–700 °C) and supported directly on an interfacial dielectric formed by oxidizing Si layers at the graphene/substrate interface. We show that the thickness of this underlying dielectric support can be tailored further by an additional Si intercalation of the graphene prior to oxidation. This produces quasi-freestanding, patterned graphene on dielectric SiO2 with a tunable thickness on demand, thus facilitating a new pathway to integrated graphene microelectronics.