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Journal Article

Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements

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Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

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PhysRevB.61.16060.pdf
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Citation

Moreno, M., Alonso, M., Sacedón, J. L., Höricke, M., Hey, R., Horn, K., et al. (2000). Si and Be intralayers at GaAs/AlAs and GaAs/GaAs junctions: Low-temperature photoemission measurements. Physical Review B, 61(23), 16060-16067. doi:10.1103/PhysRevB.61.16060.


Cite as: https://hdl.handle.net/21.11116/0000-0009-2EF2-3
Abstract
In order to distinguish between conflicting interpretations regarding the effect of intralayer insertion at semiconductor junctions, we have carried out synchrotron-radiation photoemission studies of GaAs/AlAs(100)
heterojunctions and GaAs/GaAs(110) homojunctions, with and without a Si or a Be intralayer, at room temperature and at low temperature. The synchrotron light induces photovoltage effects at low temperature, which
are found to be consistent with the room-temperature band profiles we have previously proposed for these heterojunctions [M. Moreno et al., Phys. Rev. B 58, 13 767 (1998)], assuming a doping role for the intralayer
atoms. Band discontinuities play an important role in determining the type of photovoltage effects induced. Our experimental observations can be fully understood in terms of intralayer-induced changes of the bandbending
profile, and the occurrence of photovoltage effects at low temperature, calling into question the previous interpretation of room-temperature photoemission results from GaAs/AlAs heterojunctions in terms
of intralayer-induced "band-offset" changes.