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Journal Article

Gold and silver Schottky barriers on ZnS(110)

MPS-Authors
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Neuhold,  Georg
Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

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Citation

Wolfframm, D., Evans, D. A., Neuhold, G., & Horn, K. (2000). Gold and silver Schottky barriers on ZnS(110). Journal of Applied Physics, 87(8), 3905-3911. doi:10.1063/1.372433.


Cite as: https://hdl.handle.net/21.11116/0000-0009-3EB4-7
Abstract
The evolution of the Schottky barrier between Au and Ag metal films and ZnS(110) has been
studied using photoemission. Clean and well-ordered ZnS(110) surfaces were prepared by
molecular beam epitaxy on cleaved GaP(110) surfaces. Chemical reaction and/or intermixing
between the metal and substrate were not observed upon room temperature deposition. Substrate Zn 3d attenuation plots indicate that an initial layer-by-layer growth is followed by island growth at
higher depositions. The Schottky barrier heights were found to be ΦAuB=2.19 and ΦAuB=1.81 eV, indicating a considerable dependence on metal work function. This observation agrees well with
predictions of Schottky barrier heights based on the concept of metal-induced gap states and the
influence of charge transfer based on electronegativities, and discussed in the light of current concepts of Schottky barrier characteristics.