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Journal Article

Experimental evidence for a stable GaAs surface near (113)

MPS-Authors
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Geelhaar,  Lutz
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Márquez,  Juan
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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PhysRevB.62.6908.pdf
(Publisher version), 305KB

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Citation

Geelhaar, L., Márquez, J., & Jacobi, K. (2000). Experimental evidence for a stable GaAs surface near (113). Physical Review B, 62(11), 6908-6911. doi:10.1103/PhysRevB.62.6908.


Cite as: https://hdl.handle.net/21.11116/0000-0009-4760-B
Abstract
GaAs surfaces vicinal to (113) with a continuous range of misorientation angles up to 11.5° in all azimuthal directions were created by grinding a spherical depression into (113) oriented samples. Thin homoepitaxial layers were grown onto these samples by molecular beam epitaxy (MBE), and the surfaces were in situ studied by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). The surface quality in the depression was verified by reproducing LEED patterns of the (113) and (114) surfaces. A stable GaAs surface was found that is oriented from (113) by 9°±2° towards [11̅0̅]. STM and LEED images of this surface are presented.