Exploring the studies of charge transportation of an aromatic acid based 
Co(II)-Metallogel scaffold fabricated Schottky device

Dey, Amiya; Sil, Sayantan; Majumdar, Santanu; Sahu, Rajib; Ghosh, Madhuri; Lepcha, Gerald; Ray, Partha Pratim; Dey, Biswajit

doi:10.1016/j.jpcs.2021.110300

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Exploring the studies of charge transportation of an aromatic acid based Co(II)-Metallogel scaffold fabricated Schottky device

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Sahu, Rajib
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Dey, A., Sil, S., Majumdar, S., Sahu, R., Ghosh, M., Lepcha, G., et al. (2022). Exploring the studies of charge transportation of an aromatic acid based Co(II)-Metallogel scaffold fabricated Schottky device. Journal of Physics and Chemistry of Solids, 160: 110300. doi:10.1016/j.jpcs.2021.110300.

Cite as: https://hdl.handle.net/21.11116/0000-0009-679D-3

Abstract

An efficient supramolecular metallogel of Cobalt(II) has been synthesized through the ultra-sonication technique. Cobalt(II)-salt (Cobalt acetate tetrahydrate), organic acid like terephthalic acid along with N,N-dimethyl formamide solvent are the key ingredients of the Co(II)-metallogel. The rheology-based experimental values of storage and loss modulus of the Co(II)-metallogel prove the mechanical efficiency of the metallogel-material. The chemical compositions are found through elemental investigations. The infrared spectral results help to realize the metallogel formation strategy. The electrical characteristics of the synthesized metallogel have been properly investigated. The semiconducting feature of the metallogel-material has been experimentally verified. The measured current-voltage characteristics of Cobalt(II)-metallogel (Co-TA) based thin film type metal-semiconductor (MS) junction-device shows a non-linear rectifying behaviour, representing a Schottky diode (SD) performance with promising electronic charge transport property. © 2021 Elsevier Ltd