Electronic charge transport phenomena directed smart fabrication of 
Metal-Semiconductor based electronic junction device by a supramolecular 
Mn(II)-Metallogel

Majumdar, Santanu; Sil, Sayantan; Sahu, Rajib; Ghosh, Madhuri; Lepcha, Gerald; Dey, Amiya; Mandal, Sourav; Pratim Ray, Partha; Dey, Biswajit

doi:10.1016/j.molliq.2021.116769

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Electronic charge transport phenomena directed smart fabrication of Metal-Semiconductor based electronic junction device by a supramolecular Mn(II)-Metallogel

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Sahu, Rajib
Nanoanalytics and Interfaces, Independent Max Planck Research Groups, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Majumdar, S., Sil, S., Sahu, R., Ghosh, M., Lepcha, G., Dey, A., et al. (2021). Electronic charge transport phenomena directed smart fabrication of Metal-Semiconductor based electronic junction device by a supramolecular Mn(II)-Metallogel. Journal of Molecular Liquids, 338: 116769. doi:10.1016/j.molliq.2021.116769.

Cite as: https://hdl.handle.net/21.11116/0000-0009-44BE-5

Abstract

A supramolecular Mn(II)-metallogel (Mn-TA) of profound functionality has been achieved through mixing and subsequent constanct ultrasonication of Manganese(II) acetate tetrahydrate and terephthalic acid, acting as a low molecular weight gelator (LMWG), in N,N-dimethyl formamide solvent medium. The cube like microstructural features were resolved from HAADF STEM imaging. Intersetingly we observe cubic Mn phase inside this supramolecule. The mechanical flexibility of the supramolecular Mn-TA metallogel has been explored through rheological investigations by monitoring storage modulus and loss modulus with respect to angular frequency and shear strain. Metallogel formation strategy of the Mn-TA metallogel have been explored.The electrical property of the metallogel was thoroughly examined and this measurement indicates the semiconducting nature with considerable electronic charge transportation phenomena and promising ON/OFF ratio of Mn-TA metallogel mediated metal–semiconductor (MS) junction device. Based on its conducting property, Mn-TA metallogel was successfully applied to metal–semiconductor junction based Schottky diode. © 2021 Elsevier B.V.