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Journal Article

Wet-chemical synthesis of solution-processible porous graphene via defect-driven etching


Börrnert,  Felix
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Hu, Y., Cao, Q., Neumann, C., Lehnert, T., Börrnert, F., Wang, Y., et al. (2021). Wet-chemical synthesis of solution-processible porous graphene via defect-driven etching. Carbon, 185, 568-577. doi:10.1016/j.carbon.2021.09.027.

Cite as: https://hdl.handle.net/21.11116/0000-0009-715D-0
Etching pores in the basal plane of graphene by wet-chemical methods with a certain size-control reflects a synthetic challenge. Here, a facile and controllable method is presented to produce solution-processible porous-graphene derivatives. The derivative of graphene oxide, here oxo-functionalized graphene (oxo-G) with a controlled density of in-plane vacancy defects is chosen as a precursor. Hydroxyl radicals are generated, which etch pores into the basal plane of oxo-G, preferably starting at defect sites. Thereby, solution-processible flakes of oxo-G with mu m-size lateral dimensions and pores with tunable diameters between 5 nm and 500 nm are accessible. Moreover, a plausible mechanism for the growth of pores is proposed based on AFM, TEM, UV-vis spectroscopy, FTIR spectroscopy, XPS, solid-state NMR spectroscopy and statistical Raman spectroscopy. In first approximation, the electrophilic addition and oxidation reaction between hydroxyl radicals and oxo-G close to defect-sites is the basis for etching. The porous graphene materials may act as membranes or tunable two-dimensional materials.