A resonant photoemission study of the ZrO2 valence band

Sam, J.M.; Gonzalez-Elipe, A.R.; Fernández, A.; Leinen, D.; Galan, L.; Stampfl, A.; Bradshaw, Alexander M.

doi:10.1016/0039-6028(94)91502-4

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A resonant photoemission study of the ZrO₂ valence band

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Stampfl, A.
Fritz Haber Institute, Max Planck Society;

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Bradshaw, Alexander M.
Fritz Haber Institute, Max Planck Society;

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Citation

Sam, J., Gonzalez-Elipe, A., Fernández, A., Leinen, D., Galan, L., Stampfl, A., et al. (1994). A resonant photoemission study of the ZrO₂ valence band. Surface Science, 307-309(B), 848-853. doi:10.1016/0039-6028(94)91502-4.

Cite as: https://hdl.handle.net/21.11116/0000-0009-9B2F-5

Abstract

Valence band photoemission spectra have been measured from in situ thermally grown ZrO₂ using synchrotron radiation. Resonant photoemission was observed at photon energies hv ≈ 39 eV, well above the Zr4p → 4d threshold. The phenomenon has been used to identify the Zr 4d derived valence states and good agreement was found with valence band structure calculations. Ar⁺ bombardment of ZrO₂ causes the growth of an emission feature in the band gap at a binding energy of 1.5 eV associated with oxygen vacancies as well as a second band at 3.5 eV and other changes in the O 2p band, all of which are clearly associated with the formation of a highly oxygen deficient surface layer. Resonant photoemission of the bombarded oxide not only demonstrates the d-character of the states in the band gap but also shows a significant increase of the Zr contribution to the O2p band.