Single Crystal Structure, Magnetic Properties, and Electronic Structure of TlxCr
5S8 (x = 1.0 and 0.7)

Bensch, E.; Wörner, E.; Muhler, Martin; Ruschewitz, U.

doi:10.1006/jssc.1994.1164

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Single Crystal Structure, Magnetic Properties, and Electronic Structure of Tl_xCr₅S₈ (x = 1.0 and 0.7)

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Muhler, Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Bensch, E., Wörner, E., Muhler, M., & Ruschewitz, U. (1994). Single Crystal Structure, Magnetic Properties, and Electronic Structure of Tl_xCr₅S₈ (x = 1.0 and 0.7). Journal of Solid State Chemistry, 110(2), 234-242. doi:10.1006/jssc.1994.1164.

Cite as: https://hdl.handle.net/21.11116/0000-0009-99F7-4

Abstract

TlCr₅S₈ is isotypic TlV₅S₈. It consists of layers of edge sharing CrS₆-octahedra connected by other CrS₆-octahedra to a three-dimensional network. The distances within the two-dimensional metal atom network are irregularly distributed with one short (2.959 Å) and two longer (3.332 and 3.339 Å) separations between neighboring Cr atoms. The environment of the Tl atoms within the rectangular channels is highly asymmetric and may be described as a 4 + 6 coordination. Magnetic susceptibility measurements show maxima of the susceptibility at about 125 and 145 K for the Tl-rich and Tl-poor samples, respectively. The shape of the susceptibility maxima is atypical and points to a complex interaction of the magnetic moments. Ultraviolet photoelectron spectroscopy (UPS) reveals that TlCr₅S₈ is a semiconductor. The valence band is composed of S 3p and Cr 3d states with a broadening due to the hybridization with Tl 6s and 6p states. The Tl atoms as well as the Cr atoms carry a low formal positive charge and the interactions between the guest Tl and the Cr₅S₈ host matrix are highly covalent.