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Journal Article

Single Crystal Structure, Magnetic Properties, and Electronic Structure of TlxCr5S8 (x = 1.0 and 0.7)


Muhler,  Martin
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Bensch, E., Wörner, E., Muhler, M., & Ruschewitz, U. (1994). Single Crystal Structure, Magnetic Properties, and Electronic Structure of TlxCr5S8 (x = 1.0 and 0.7). Journal of Solid State Chemistry, 110(2), 234-242. doi:10.1006/jssc.1994.1164.

Cite as: https://hdl.handle.net/21.11116/0000-0009-99F7-4
TlCr5S8 is isotypic TlV5S8. It consists of layers of edge sharing CrS6-octahedra connected by other CrS6-octahedra to a three-dimensional network. The distances within the two-dimensional metal atom network are irregularly distributed with one short (2.959 Å) and two longer (3.332 and 3.339 Å) separations between neighboring Cr atoms. The environment of the Tl atoms within the rectangular channels is highly asymmetric and may be described as a 4 + 6 coordination. Magnetic susceptibility measurements show maxima of the susceptibility at about 125 and 145 K for the Tl-rich and Tl-poor samples, respectively. The shape of the susceptibility maxima is atypical and points to a complex interaction of the magnetic moments. Ultraviolet photoelectron spectroscopy (UPS) reveals that TlCr5S8 is a semiconductor. The valence band is composed of S 3p and Cr 3d states with a broadening due to the hybridization with Tl 6s and 6p states. The Tl atoms as well as the Cr atoms carry a low formal positive charge and the interactions between the guest Tl and the Cr5S8 host matrix are highly covalent.