English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

On the structure and electronic properties of the GaAs(113̄)B surface

MPS-Authors
/persons/resource/persons268037

Scholz,  S.M.
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons262601

Morgenstern,  M.
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21665

Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Scholz, S., Morgenstern, M., & Jacobi, K. (1994). On the structure and electronic properties of the GaAs(113̄)B surface. Surface Science, 316(1-2), 157-167. doi:10.1016/0039-6028(94)91136-3.


Cite as: https://hdl.handle.net/21.11116/0000-0009-A3CC-9
Abstract
GaAs(113̄)B surfaces were prepared by ion bombardment and annealing (IBA) and by molecular beam epitaxy (MBE) using a single Knudsen cell filled with GaAs. These surfaces were investigated through low-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and angle-resolved UV photoelectron spectroscopy (ARUPS) using photon energies of hv = 11.8 and 21.2 eV and synchrotron light. With both IBA and MBE, a 1 × 1 reconstructed surface was prepared which differs by a large amount of As in the surface layer. For the MBE 1 × 1 reconstructed surface, three different surface states or resonances were found at +0.3, −0.7 and −3.5 eV with respect to the valence band maximum which are assigned to As-derived dangling bonds and back bonds. The states at + 0.3 and -0.7 eV can be quenched by H adsorption. For the n-type sample the bands are bent upwards by 0.30 V at the surface.