English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning

MPS-Authors
/persons/resource/persons252941

Neuhold,  Georg
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons255949

Paggel,  Jens
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21640

Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

PhysRevB.54.8623.pdf
(Publisher version), 83KB

Supplementary Material (public)
There is no public supplementary material available
Citation

Neuhold, G., Chassé, T., Paggel, J., & Horn, K. (1996). Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B, 54(12), 8623-8626. doi:10.1103/PhysRevB.54.8623.


Cite as: https://hdl.handle.net/21.11116/0000-0009-AA9F-5
Abstract
The deposition of submonolayer quantities of Cs onto GaP(110) causes strong photoemission features in the region of the semiconductor fundamental band gap. This observation is interpreted in terms of emission from a hybrid state caused by the interaction of the Cs 6s level with the unoccupied dangling-bond state. This hybrid state has long been postulated in descriptions of the metal-semiconductor surface bond, and is responsible for the pinning of the Fermi level. The absence of dispersion in the state suggests that Cs/GaP(110) represents a realization of a Mott-Hubbard insulator, by comparison with results from other alkali-metal/compound-semiconductor systems.