Electronic and surfactant effects of As interlayers at AgInP (110) interfaces

Schömann, S.; Schmidt, K.; Peisert, H.; Chassé, T.; Horn, Karsten

doi:10.1016/0039-6028(95)01287-7

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Electronic and surfactant effects of As interlayers at AgInP (110) interfaces

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Horn, Karsten
Fritz Haber Institute, Max Planck Society;

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Schömann, S., Schmidt, K., Peisert, H., Chassé, T., & Horn, K. (1996). Electronic and surfactant effects of As interlayers at AgInP (110) interfaces. Surface Science, 352-354, 855-860. doi:10.1016/0039-6028(95)01287-7.

Cite as: https://hdl.handle.net/21.11116/0000-0009-ABBA-5

Abstract

The effect of an intermediate arsenic monolayer on the evolution of an AgInP (110) interface has been studied using high resolution photoemission. The interface reaction is suppressed by the intermediate layer very effectively. Part of the As layer segregates on top of the growing Ag film and acts as a surfactant during the initial stages of the growth. The growth mode during the initial stages of the silver film formation is changed from island to Stranski—Krastanov-like growth. There is an increase of the Schottky barrier by 0.1 eV due to the As interlayer. Experimental results of Schottky barrier heights are discussed in terms of both reaction-induced defect formation and theoretical predictions regarding dangling bond saturation.