English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Dissociative adsorption of O2 and H2O on Si(113): chemical shifts of the Si 2p level

MPS-Authors
/persons/resource/persons268037

Scholz,  S.M.
Fritz Haber Institute, Max Planck Society;

/persons/resource/persons21665

Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

External Resource
No external resources are shared
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)
There are no public fulltexts stored in PuRe
Supplementary Material (public)
There is no public supplementary material available
Citation

Scholz, S., & Jacobi, K. (1996). Dissociative adsorption of O2 and H2O on Si(113): chemical shifts of the Si 2p level. Surface Science, 369(1-3), 117-125. doi:10.1016/S0039-6028(96)00882-5.


Cite as: https://hdl.handle.net/21.11116/0000-0009-B644-D
Abstract
Using high-resolution Si 2p surface core-level spectroscopy, dissociative adsorption of O2 and H2O was studied on the Si(113)-(3 × 2) surface. Dissociation of O2 gives rise to the known chemically shifted Si 2p components of Si1+ (−930 meV, shifted the larger binding energy), Si2+ (−1760 meV), Si3+ (−2510 meV), and Si4+ (−3500 meV). The relative abundance of the Si2+ component lies between those for the Si(001) and Si(111) surfaces. Following dissociative adsorption of H2O, H-derived (at −220 meV) and OH-derived (at −900 meV) surface core-level shifts were observed. The dissociative adsorption is found to be similar to that on Si(001), lending support to the recent structure model of the Si(113) surface which assumes Si dimers as constituents at the surface. Annealing to higher temperatures leads to a decomposition of the OH group into H and O which desorb sequentially at higher temperatures. 5–10% of the H2O saturation dose leads to quenching of the Si(113)-(3 × 2) surface states and to a pinning of the Fermi level at 730 meV above the valence-band maximum.