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Interface chemistry and band bending induced by Pt deposition onto GaP(110)

MPG-Autoren
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Chassé,  Thomas
Fritz Haber Institute, Max Planck Society;
Sektion Chemie der Karl-Marx-Uni- versitat Leipzig;

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Theis,  Wolfgang
Fritz Haber Institute, Max Planck Society;

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Chen,  T.P.
Fritz Haber Institute, Max Planck Society;

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Evans,  D.A.
Fritz Haber Institute, Max Planck Society;

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Horn,  Karsten
Fritz Haber Institute, Max Planck Society;

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Zitation

Chassé, T., Theis, W., Chen, T., Evans, D., Horn, K., Pettenkofer, C., et al. (1991). Interface chemistry and band bending induced by Pt deposition onto GaP(110). Surface Science, 251-252, 472-477. doi:10.1016/0039-6028(91)91037-X.


Zitierlink: https://hdl.handle.net/21.11116/0000-0009-F5C1-8
Zusammenfassung
The Pt/GaP(110) interface has been studied by core and valence level photoemission using synchrotron radiation. The results are characteristic of a reactive interface, where the GaP substrate is disrupted by the deposited platinum layer resulting in an increasing reacted Ga emission and a strong attenuation of the substrate Ga emission. The detailed analysis of band bending shows that Pt, being a high work-function material, nevertheless has a final pinning position which is close to that of other materials. The value for the Schottky barrier inferred from the photoemission data, Φbn is 1.56 eV. We observe a distortion of the equilibrium band arrangement by the incident photons, giving rise to a surface photovoltage even at room temperature. This effect can strongly influence the determination of surface band bending.