Integrated hybrid VO2–silicon optical memory

Jung, Youngho; Han, Hyeon; Sharma, Ankita; Jeong, Junho; Parkin, Stuart S. P.; Poon, Joyce K. S.

doi:10.1021/acsphotonics.1c01410

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Integrated hybrid VO₂–silicon optical memory

MPS-Authors

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Jung, Youngho
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Han, Hyeon
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Sharma, Ankita
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Parkin, Stuart S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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Poon, Joyce K. S.
Nanophotonics, Integration, and Neural Technology, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1021/acsphotonics.1c01410
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Citation

Jung, Y., Han, H., Sharma, A., Jeong, J., Parkin, S. S. P., & Poon, J. K. S. (2022). Integrated hybrid VO₂–silicon optical memory. ACS Photonics, 9(1), 217-223. doi:10.1021/acsphotonics.1c01410.

Cite as: https://hdl.handle.net/21.11116/0000-000A-0282-0

Abstract

Vanadium dioxide (VO₂) is an interesting material for hybrid photonic integrated devices due to its insulator–metal phase transition. Utilizing the hysteresis of the phase transition in voltage-biased VO₂, we demonstrate a compact hybrid VO₂–silicon optical memory element integrated into a silicon waveguide. An optical pulse writes the VO₂ memory, leading to an optical attenuation that can be read out by the optical transmission in a silicon waveguide. Our on-chip memory cell can be optically written with energy as low as 23.5 pJ per pulse and with a 10–90% rise time of ∼100 ns. This approach is promising for optical data storage in silicon photonic integrated circuits.