English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse
  1. View item / 
  2. Item Summary

Item

ITEM ACTIONSEXPORT
Add to Basket
  Local TagsRelease HistoryDetailsSummary

Released
Journal Article

Crystal-field mediated electronic transitions of EuS up to 35 GPa

MPS-Authors
/persons/resource/persons260281

Meyerheim,  Holger L.
Department of Synthetic Materials and Functional Devices (SMFD), Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource

https://doi.org/10.1038/s41598-022-05321-9
(Publisher version)

Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

s41598-022-05321-9.pdf
(Publisher version), 3MB

Supplementary Material (public)
There is no public supplementary material available
Citation

Monteseguro, V., Barreda-Argueso, J. A., Ruiz-Fuertes, J., Rosa, A. D., Meyerheim, H. L., Irifune, T., et al. (2022). Crystal-field mediated electronic transitions of EuS up to 35 GPa. Scientific Reports, 12(1): 1217. doi:10.1038/s41598-022-05321-9.


Cite as: https://hdl.handle.net/21.11116/0000-000A-0862-F
Abstract
An advanced experimental and theoretical model to explain the correlation between the electronic and local structure of Eu2+ in two different environments within a same compound, EuS, is presented. EuX monochalcogenides (X: O, S, Se, Te) exhibit anomalies in all their properties around 14 GPa with a semiconductor to metal transition. Although it is known that these changes are related to the 4f75d0 → 4f65d1 electronic transition, no consistent model of the pressure-induced modifications of the electronic structure currently exists. We show, by optical and x-ray absorption spectroscopy, and by ab initio calculations up to 35 GPa, that the pressure evolution of the crystal field plays a major role in triggering the observed electronic transitions from semiconductor to the half-metal and finally to the metallic state.