Help Privacy Policy Disclaimer
  Advanced SearchBrowse




Journal Article

Crystal-field mediated electronic transitions of EuS up to 35 GPa


Meyerheim,  Holger L.
Department of Synthetic Materials and Functional Devices (SMFD), Max Planck Institute of Microstructure Physics, Max Planck Society;

External Resource
Fulltext (restricted access)
There are currently no full texts shared for your IP range.
Fulltext (public)

(Publisher version), 3MB

Supplementary Material (public)
There is no public supplementary material available

Monteseguro, V., Barreda-Argueso, J. A., Ruiz-Fuertes, J., Rosa, A. D., Meyerheim, H. L., Irifune, T., et al. (2022). Crystal-field mediated electronic transitions of EuS up to 35 GPa. Scientific Reports, 12(1): 1217. doi:10.1038/s41598-022-05321-9.

Cite as: https://hdl.handle.net/21.11116/0000-000A-0862-F
An advanced experimental and theoretical model to explain the correlation between the electronic and local structure of Eu2+ in two different environments within a same compound, EuS, is presented. EuX monochalcogenides (X: O, S, Se, Te) exhibit anomalies in all their properties around 14 GPa with a semiconductor to metal transition. Although it is known that these changes are related to the 4f75d0 → 4f65d1 electronic transition, no consistent model of the pressure-induced modifications of the electronic structure currently exists. We show, by optical and x-ray absorption spectroscopy, and by ab initio calculations up to 35 GPa, that the pressure evolution of the crystal field plays a major role in triggering the observed electronic transitions from semiconductor to the half-metal and finally to the metallic state.