Adatom-induced donor states during the early stages of Schottky-barrier 
formation: Ga, In, and Pb on Si(113)

Althainz, P.; Myler, U.; Jacobi, Karl

doi:/10.1103/PhysRevB.43.14157

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Adatom-induced donor states during the early stages of Schottky-barrier formation: Ga, In, and Pb on Si(113)

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Althainz, P.
Fritz Haber Institute, Max Planck Society;

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Myler, U.
Fritz Haber Institute, Max Planck Society;

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Jacobi, Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Althainz, P., Myler, U., & Jacobi, K. (1991). Adatom-induced donor states during the early stages of Schottky-barrier formation: Ga, In, and Pb on Si(113). Physical Review B, 43(17), 14157-14163. doi:/10.1103/PhysRevB.43.14157.

Cite as: https://hdl.handle.net/21.11116/0000-000A-0F04-2

Abstract

We performed angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy for the early stages of Schottky-barrier formation of Ga, In, and Pb on Si(113) at room temperature. In the coverage region below 0.1 monolayer a band-bending behavior, typical for donor states, is found. The energies of the adatom-induced donor states in the band gap depend on the adatoms. The Schottky barrier reaches its final value at a coverage of about one monolayer. The values are 0.35 eV above the valence-band maximum for In and Ga and 0.425 eV for Pb. Measurements with Xe interlayers were made to verify that these interfaces are not reactive.