A bistable behavior of the Si and Se donors in AlxGa1−xAs

Biernacki, S. W.

doi:10.1016/0038-1098(96)00128-7

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A bistable behavior of the Si and Se donors in Al_xGa_1−xAs

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Biernacki, S. W.
Theory, Fritz Haber Institute, Max Planck Society;
Institute of Physics, Polish Academy of Sciences;

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Citation

Biernacki, S. W. (1996). A bistable behavior of the Si and Se donors in Al_xGa_1−xAs. Solid State Communications, 98(10), 863-868. doi:10.1016/0038-1098(96)00128-7.

Cite as: https://hdl.handle.net/21.11116/0000-000A-0FC6-7

Abstract

It is shown that A₁(Γ) and A₁(L) substitutional group IV and group VI donor states transform into each other with the alloy composition in Al_xGa_1−xAs. There are no energy barrier for such transformation. The arguments are presented that the DX state of these donors arises from T₂(L) resonant state as a result of spontaneous tetragonal distortion. Such distortion changes the donor - nearest atom distance by about 2%.