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Structure and electronic properties of the Si(113) surface

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Myler,  U.
Fritz Haber Institute, Max Planck Society;

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Althainz,  P.
Fritz Haber Institute, Max Planck Society;

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Jacobi,  Karl
Physical Chemistry, Fritz Haber Institute, Max Planck Society;

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Citation

Myler, U., Althainz, P., & Jacobi, K. (1991). Structure and electronic properties of the Si(113) surface. Surface Science, 251-252, 607-611. doi:10.1016/0039-6028(91)91064-5.


Cite as: https://hdl.handle.net/21.11116/0000-000A-5B04-C
Abstract
The Si(113) surface has been investigated using video low-energy electron diffraction (LEED), angle-resolved UV photoelectron spectroscopy (ARUPS), and high-resolution electron energy-loss spectroscopy (HREELS) of hydrogen adsorption.

At 300 K. we find a 3 × 2 reconstruction for the clean Si(113) surface. Hydrogen adsorption proceeds in two steps. During the first step only Si-H bonds are formed, the photoemission from the dangling bonds becomes completely quenched and the 3 × 2 structure is transformed into a 3 × 1-H. These results strongly indicate that the 3 × 2 → 3 × 1-H transformation proceeds without bond breaking and Si transport. In the second step Si-H2 is formed in addition to Si-H and the reconstruction is changed from 3 × 1-H to 1 × 1. We discuss a model for the 3 × 2 structure in which the number of dangling bonds is largely reduced and an easy 3 × 2 → 3 × 1-H transformation is possible. However, a model that meets all experimental demands is still lacking.