Control of oxygen vacancy ordering in brownmillerite thin films via ionic 
liquid gating

Han, Hyeon; Sharma, Arpit; Meyerheim, Holger L.; Yoon, Jiho; Deniz, Hakan; Jeon, Kun-Rok; Sharma, Ankit K.; Mohseni, Katayoon; Guillemard, Charles; Valvidares, Manuel; Gargiani, Pierluigi; Parkin, Stuart S. P.

doi:10.1021/acsnano.2c00012

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Control of oxygen vacancy ordering in brownmillerite thin films via ionic liquid gating

MPS-Authors

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Han, Hyeon
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons263213

Sharma, Arpit
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260281

Meyerheim, Holger L.
Department of Synthetic Materials and Functional Devices (SMFD), Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260487

Yoon, Jiho
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons259903

Deniz, Hakan
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons263243

Jeon, Kun-Rok
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons260833

Sharma, Ankit K.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons262020

Mohseni, Katayoon
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

/persons/resource/persons245678

Parkin, Stuart S. P.
Nano-Systems from Ions, Spins and Electrons, Max Planck Institute of Microstructure Physics, Max Planck Society;

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https://doi.org/10.1021/acsnano.2c00012
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Citation

Han, H., Sharma, A., Meyerheim, H. L., Yoon, J., Deniz, H., Jeon, K.-R., et al. (2022). Control of oxygen vacancy ordering in brownmillerite thin films via ionic liquid gating. ACS Nano, 16, 6206-6214. doi:10.1021/acsnano.2c00012.

Cite as: https://hdl.handle.net/21.11116/0000-000A-5CDB-9

Abstract

Oxygen defects and their atomic arrangements play a significant role in the physical properties of many transition metal oxides. The exemplary perovskite SrCoO_3-δ (P-SCO) is metallic and ferromagnetic. However, its daughter phase, the brownmillerite SrCoO_2.5 (BM-SCO), is insulating and an antiferromagnet. Moreover, BM-SCO exhibits oxygen vacancy channels (OVCs) that in thin films can be oriented either horizontally (H-SCO) or vertically (V-SCO) to the film’s surface. To date, the orientation of these OVCs has been manipulated by control of the thin film deposition parameters or by using a substrate-induced strain. Here, we present a method to electrically control the OVC ordering in thin layers via ionic liquid gating (ILG). We show that H-SCO (antiferromagnetic insulator, AFI) can be converted to P-SCO (ferromagnetic metal, FM) and subsequently to V-SCO (AFI) by the insertion and subtraction of oxygen throughout thick films via ILG. Moreover, these processes are independent of substrate-induced strain which favors formation of H-SCO in the as-deposited film. The electric-field control of the OVC channels is a path toward the creation of oxitronic devices.