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Abstract

Rashba materials have appeared as an ideal playground for spin-to-charge
conversion in prototype spintronics devices. Among them, $\alpha$-GeTe(111) is
a non-centrosymmetric ferroelectric (FE) semiconductor for which a strong
spin-orbit interaction gives rise to giant Rashba coupling. Its room
temperature ferroelectricity was recently demonstrated as a route towards a new
type of highly energy-efficient non-volatile memory device based on switchable
polarization. Currently based on the application of an electric field, the
writing and reading processes could be outperformed by the use of femtosecond
(fs) light pulses requiring exploration of the possible control of
ferroelectricity on this timescale. Here, we probe the room temperature
transient dynamics of the electronic band structure of $\alpha$-GeTe(111) using
time and angle-resolved photoemission spectroscopy (tr-ARPES). Our experiments
reveal an ultrafast modulation of the Rashba coupling mediated on the fs
timescale by a surface photovoltage (SPV), namely an increase corresponding to
a 13 % enhancement of the lattice distortion. This opens the route for the
control of the FE polarization in $\alpha$-GeTe(111) and FE semiconducting
materials in quantum heterostructures.