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Journal Article

Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal

MPS-Authors
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Tang,  P.
School of Materials Science and Engineering, Beihang University;
Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society;
Center for Free-Electron Laser Science;

External Resource

https://doi.org/10.1002/adma.202200487
(Publisher version)

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Citation

Qin, P., Yan, H., Fan, B., Feng, Z., Zhou, X., Wang, X., et al. (2022). Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal. Advanced Materials, 34(24): 2200487. doi:10.1002/adma.202200487.


Cite as: https://hdl.handle.net/21.11116/0000-000A-7DA4-1
Abstract
The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals represents one of the most important breakthroughs for the emergent antiferromagnetic spintronics. The tuning of chemical potential has been an important theoretical approach to varying the anomalous Hall conductivity, but the direct experimental demonstration has been challenging owing to the large carrier density of metals. In this work, an ultrathin noncollinear antiferromagnetic Mn3Ge film is fabricated and its carrier density is modulated by ionic liquid gating. Via a small voltage of ≈3 V, its carrier density is altered by ≈90% and, accordingly, the anomalous Hall effect is completely switched off. This work thus creates an attractive new way to steering the anomalous Hall effect in noncollinear antiferromagnets.