Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic 
electron-emission microscopy currents

Reuter, Karsten; de Andres, P. L.; Garcı́a-Vidal, F. J.; Flores, F.; Heinz, K.

doi:10.1016/S0169-4332(00)00387-1

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Electronic surface structure of CoSi₂(111)/Si(111): implications for ballistic electron-emission microscopy currents

MPS-Authors

There are no MPG-Authors in the publication available

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Reuter, K., de Andres, P. L., Garcı́a-Vidal, F. J., Flores, F., & Heinz, K. (2000). Electronic surface structure of CoSi₂(111)/Si(111): implications for ballistic electron-emission microscopy currents. Applied Surface Science, 166(1-4), 103-107. doi:10.1016/S0169-4332(00)00387-1.

Cite as: https://hdl.handle.net/21.11116/0000-000A-EE6A-4

Abstract

Using a decimation technique, and imposing electrostatic self-consistency, we compute the surface electronic structure of various CoSi₂(111)/Si(111) phases. The projected band structures and LDOS indicate a richness of surface related features. For the (1×1)Co-rich termination excellent agreement with experimental data and a recent DFT investigation is obtained. Strongly localized surface states on the high chain atoms of the (2×1) Pandey-chain like reconstruction are identified as causing the experimentally observed surface topography induced contrast in Ballistic Electron Emission Microscopy (BEEM) images of such films.