Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic 
electron-emission microscopy currents

Reuter, Karsten; de Andres, P. L.; Garcı́a-Vidal, F. J.; Flores, F.; Heinz, K.

doi:10.1016/S0169-4332(00)00387-1

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Electronic surface structure of CoSi₂(111)/Si(111): implications for ballistic electron-emission microscopy currents

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引用

Reuter, K., de Andres, P. L., Garcı́a-Vidal, F. J., Flores, F., & Heinz, K. (2000). Electronic surface structure of CoSi₂(111)/Si(111): implications for ballistic electron-emission microscopy currents. Applied Surface Science, 166(1-4), 103-107. doi:10.1016/S0169-4332(00)00387-1.

引用: https://hdl.handle.net/21.11116/0000-000A-EE6A-4

要旨

Using a decimation technique, and imposing electrostatic self-consistency, we compute the surface electronic structure of various CoSi₂(111)/Si(111) phases. The projected band structures and LDOS indicate a richness of surface related features. For the (1×1)Co-rich termination excellent agreement with experimental data and a recent DFT investigation is obtained. Strongly localized surface states on the high chain atoms of the (2×1) Pandey-chain like reconstruction are identified as causing the experimentally observed surface topography induced contrast in Ballistic Electron Emission Microscopy (BEEM) images of such films.