Ballistic Electron Emission Microscopy on CoSi2/Si(111) Interfaces: Band 
Structure Induced Atomic-Scale Resolution and Role of Localized Surface States

Reuter, Karsten; Garcia-Vidal, F. J.; de Andres, P. L.; Flores, F.; Heinz, K.

doi:10.1103/PhysRevLett.81.4963

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Ballistic Electron Emission Microscopy on CoSi₂/Si(111) Interfaces: Band Structure Induced Atomic-Scale Resolution and Role of Localized Surface States

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Reuter, K., Garcia-Vidal, F. J., de Andres, P. L., Flores, F., & Heinz, K. (1998). Ballistic Electron Emission Microscopy on CoSi₂/Si(111) Interfaces: Band Structure Induced Atomic-Scale Resolution and Role of Localized Surface States. Physical Review Letters, 81(22), 4963-4966. doi:10.1103/PhysRevLett.81.4963.

Cite as: https://hdl.handle.net/21.11116/0000-000A-EE72-A

Abstract

Applying a Keldysh Green's function method it is shown that hot electrons injected from a scanning tunneling microscope tip into a CoSi₂/Si(111) system form a highly focused beam due to the silicide band structure. This explains the atomic resolution obtained in recent ballistic electron emission microscopy (BEEM) experiments. Localized surface states in the (2×1) reconstruction are found to be responsible for the also reported anticorrugation of the BEEM current. These results clearly demonstrate the importance of bulk and surface band structure effects for a detailed understanding of BEEM data.