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Abstract

We examine vacancy defects in two-dimensional silicon carbide (2D-SiC) using
density functional theory in order to explore their magneto-optical properties
and their potential in quantum technologies. The defects include the
silicon-vacancy (V$_{\text{Si}}$) and two antisite-vacancy pairs
(V$_{\text{C}}$-C$_{\text{Si}}$ and V$_{\text{Si}}$-C$_{\text{Si}}$). We
determine the characteristic hyperfine tensors and the fluorescence spectrum
that are the key fingerprints of silicon-vacancy-related paramagnetic color
centers in 2D-SiC and may be observed in electron paramagnetic resonance and
photoluminescence experiments. In particular, we show that the
V$_{\text{C}}$-C$_{\text{Si}}^-$ defect is promising candidate for a
single-photon quantum emitter and qubit.