High-field magnetoexcitons in unstrained GaAs/AlxGa1-xAs quantum dots

Sidor, Y.; Partoens, B.; Peeters, F. M.; Schildermans, N.; Hayne, M.; Moshchalkov, V. V.; Rastelli, A.; Schmidt, O. G.

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High-field magnetoexcitons in unstrained GaAs/Al_xGa_1-xAs quantum dots

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Sidor, Y., Partoens, B., Peeters, F. M., Schildermans, N., Hayne, M., Moshchalkov, V. V., et al. (2006). High-field magnetoexcitons in unstrained GaAs/Al_xGa_1-xAs quantum dots. Physical Review B, 73(15): 155334.

Cite as: https://hdl.handle.net/21.11116/0000-000F-02CD-8

Abstract

The magnetic field dependence of the excitonic states in unstrained
GaAs/AlxGa1-xAs quantum dots is investigated theoretically and
experimentally. The diamagnetic shift for the ground and the excited
states are studied in magnetic fields of varying orientation. In the
theoretical study, calculations are performed within the single band
effective mass approximation, including band nonparabolicity, the full
experimental three-dimensional dot shape and the electron-hole Coulomb
interaction. These calculations are compared with the experimental
results for both the ground and the excited states in fields up to 50
Tesla. Good agreement is found between theory and experiment.