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Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction

MPS-Authors
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Vitali,  L.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Burghard,  M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Wahl,  P.
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schneider,  M. A.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern,  K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Vitali, L., Burghard, M., Wahl, P., Schneider, M. A., & Kern, K. (2006). Local pressure-induced metallization of a semiconducting carbon nanotube in a crossed junction. Physical Review Letters, 96(8): 086804.


Cite as: https://hdl.handle.net/21.11116/0000-000F-02BF-8
Abstract
The electronic and vibrational density of states of a semiconducting
carbon nanotube in a crossed junction was investigated by elastic and
inelastic scanning tunneling spectroscopy. The strong radial
compression of the nanotube at the junction induces local metallization
spatially confined to a few nanometers. The local electronic
modifications are correlated with the observed changes in the radial
breathing and G band phonon modes, which react very sensitively to
local mechanical deformation. In addition, the experiments reveal the
crucial contribution of the image charges to the contact potential at
nanotube-metal interfaces.