Measurement of the surface strain induced by reconstructed surfaces of 
GaAs(001) using photoreflectance and reflectance-difference spectroscopies

Lastras-Martínez, L. F.; Flores-Camacho, J. M.; Lastras-Martínez, A.; Balderas-Navarro, R. E.; Cardona, M.

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Measurement of the surface strain induced by reconstructed surfaces of GaAs(001) using photoreflectance and reflectance-difference spectroscopies

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Cardona, M.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Lastras-Martínez, L. F., Flores-Camacho, J. M., Lastras-Martínez, A., Balderas-Navarro, R. E., & Cardona, M. (2006). Measurement of the surface strain induced by reconstructed surfaces of GaAs(001) using photoreflectance and reflectance-difference spectroscopies. Physical Review Letters, 96(4): 047402.

Cite as: https://hdl.handle.net/21.11116/0000-000F-0305-8

Abstract

We report photoreflectance-difference and reflectance-difference
measurements on reconstructed GaAs (001) surfaces. From these data the
linear and quadratic electro-optic coefficient spectra are determined
in the important 2.8-3.4 eV spectral region. The surface strain and
fields induced by the surface reconstruction are also determined. We
show experimentally that between c(4x4) and (2x4) surfaces, there is an
inversion of the surface electric field which we attribute to a direct
piezo-electric effect related to the surface strain induced by
reconstruction.