Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum 
dots controlled by a tunable static electric field

Beirne, G. J.; Hermannstädter, C.; Wang, L.; Rastelli, A.; Schmidt, O. G.; Michler, P.

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Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field

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Wang, L.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Beirne, G. J., Hermannstädter, C., Wang, L., Rastelli, A., Schmidt, O. G., & Michler, P. (2006). Quantum light emission of two lateral tunnel-coupled (In,Ga)As/GaAs quantum dots controlled by a tunable static electric field. Physical Review Letters, 96(13): 137401.

Cite as: https://hdl.handle.net/21.11116/0000-000F-029F-C

Abstract

Lateral quantum coupling between two self-assembled (In,Ga)As quantum
dots has been observed. Photon statistics measurements between the
various excitonic and biexcitonic transitions of these lateral quantum
dot molecules display strong antibunching confirming the presence of
coupling. Furthermore, we observe an anomalous exciton Stark shift with
respect to static electric field. A simple model indicates that the
lateral coupling is due to electron tunneling between the dots when the
ground states are in resonance. The electron probability can then be
shifted to either dot and the system can be used to create a
wavelength-tunable single-photon emitter by simply applying a voltage.