Structural chemistry, magnetism and electrical properties of binary Gd 
silicides and Ho3Si4

Roger, K.; Babizhetskyy, V.; Hiebl, K.; Halet, J. F.; Guérin, R.

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Structural chemistry, magnetism and electrical properties of binary Gd silicides and Ho₃Si₄

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Babizhetskyy, V.
Department Nanochemistry (Bettina V. Lotsch), Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Materials (Hidenori Takagi), Max Planck Institute for Solid State Research, Max Planck Society;
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Roger, K., Babizhetskyy, V., Hiebl, K., Halet, J. F., & Guérin, R. (2006). Structural chemistry, magnetism and electrical properties of binary Gd silicides and Ho₃Si₄. Journal of Alloys and Compounds, 407(1-2), 25-35.

Cite as: https://hdl.handle.net/21.11116/0000-000F-028F-E

Abstract

Binary gadolinium silicides were thoroughly investigated with respect
to their structural chemistry and physical properties as well.
Formation and structure types of all known binary phases were
confirmed. In addition, a new binary compound Gd3Si4 belonging to the
Ho3Si4 type was obtained through a sluggish peritectoidal reaction
between the binary phases GdSi and GdSi2-x. In addition, the limits of
the homogeneity range of the GdSi2-x phase (AlB2 type) were also
confirmed. Moreover, the crystal structures of Gd5Si3 (Mn5Si3 type) and
GdSi (FeB type) were determined from X-ray single crystal data. The
magnetic and electrical properties for most of the binary Gd-Si phases,
encountered within this system, have been studied. The magnetic
properties are characterised by the onset of magnetic ordering below
100 K. Gd5Si3 shows an antiferromagnetic transition at T-N = 75 K, GdSi
orders weakly ferromagnetically at T-C = 78 K followed by an
antiferromagnetic spin alignment at T-N = 54 K, GdSi2-x reveals also
two consecutive transitions at T-N = 54 K and T-C = 35 K and GdSi2
exhibits the same behaviour but at T-N = 26 K and T-C = 14 K. In
addition, magnetic measurements were also performed for the binary
silicide Ho3Si4 (antiferromagnetic behaviour, T-N = 16 K), structurally
related to Gd3Si4. The electrical resistivities for all silicides
resemble the temperature dependence of metals, with characteristic
changes of slope in the resistivity curves due to the reduced electron
scattering in the magnetically ordered states. (c) 2005 Elsevier B.V.
All rights reserved.