Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): 
theory and experiment

Kratzer, P.; Liu, Q.K.K.; Acosta-Diaz, P.; Manzano, C.; Costantini, G.; Songmuang, R.; Rastelli, A.; Schmidt, O.G.; Kern, K.

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Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): theory and experiment

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Acosta-Diaz, P.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Manzano, C.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Costantini, G.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Songmuang, R.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Rastelli, A.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt, O.G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Kern, K.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Kratzer, P., Liu, Q., Acosta-Diaz, P., Manzano, C., Costantini, G., Songmuang, R., et al. (2006). Shape transition during epitaxial growth of InAs quantum dots on GaAs(001): theory and experiment. Physical Review B, 73: 205347.

Cite as: https://hdl.handle.net/21.11116/0000-000F-024B-B

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