Effect of Ar+ irradiation on the behaviour of carbon nanotube transistor

Woo, Y. S.; Osváth, Z.; Vértesy, G.; Biró, L. P.; Roth, S.

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Effect of Ar⁺ irradiation on the behaviour of carbon nanotube transistor

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Roth, S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Woo, Y. S., Osváth, Z., Vértesy, G., Biró, L. P., & Roth, S. (2006). Effect of Ar⁺ irradiation on the behaviour of carbon nanotube transistor. physica status solidi (b), 243(13), 3390-3393.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FF2F-0

Abstract

The characteristics of carbon nanotube field effect transistor are
investigated after the whole device is irradiated with Ar+ ions. The
resistance become much higher due to the electron scattering at
vacancies produced by Ar+ irradiation. In addition, the subthreshold
slop, S, (dV(G)/d(log I-D)) increases and the Schottky barrier height
decreases after the irradiation, which imply the interface states
generated within the band gap of the semiconducting single walled
carbon nanotube. Therefore, we suggest a way that makes a transparent
contact for electron transport by manipulating the vacancy formation at
the interface between nanotube and metal leads. (c) 2006 WILEY-VCH
Verlag GmbH & Co. KGaA, Weinheim.