Electrical properties of the ZnO nanowire transistor and its analysis with 
equivalent circuit model

Yim, C. Y.; Jeon, D. Y.; Kim, K. H.; Kim, G. T.; Woo, Y. S.; Roth, S.; Lee, J. S.; Kim, S.

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Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model

MPS-Authors

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Yim, C. Y.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kim, G. T.
Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society;

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Roth, S.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280214

Lee, J. S.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Kim, S.
Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Yim, C. Y., Jeon, D. Y., Kim, K. H., Kim, G. T., Woo, Y. S., Roth, S., et al. (2006). Electrical properties of the ZnO nanowire transistor and its analysis with equivalent circuit model. Journal of the Korean Physical Society, 48(6), 1565-1569.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FCD2-9

Abstract

A single ZnO nanowire field-effect transistor(FET) was fabricated and
its current-voltage characteristics were recorded at the temperatures
ranging from T = 107 K to 300 K. Current-voltage characteristics showed
typical non-ohmic behaviors with noticeable temperature dependence of
the carrier concentration and the mobilities, reflecting the influence
of the contact barriers formed between the ZnO nanowire and metal
electrodes. In this paper, an equivalent circuit model of the ZnO
nanowire FET and its analysis methods with PSPICE simulation are
suggested in order to model the contact barriers in nanowire devices.