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Journal Article

Electronic structure of antiferromagnetic LaMnO3 and the effects of charge polarization

MPS-Authors
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Nohara,  Y.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Materials (Hidenori Takagi), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280681

Yamasaki,  A.
Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Nohara, Y., Yamasaki, A., Kobayashi, S., & Fujiwara, T. (2006). Electronic structure of antiferromagnetic LaMnO3 and the effects of charge polarization. Physical Review B, 74(6): 064417.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FCE4-5
Abstract
The electronic structure of A-type antiferromagnetic insulator LaMnO3
is investigated by the GW approximation. The band gap and spectrum are
in a good agreement with experimental observation. The lifetime of
electrons in conduction bands is much shorter than that of holes in
valence bands. The insulator-to-metal transition with
antiferromagnetic-to-ferromagnetic transition with photocarrier
injection is attributed to the characteristic properties of excited
electron states in A-type antiferromagnetic perovskite systems. The
onsite d-d Coulomb interaction is strongly screened at the low energy
region by mobile e(g) electrons.