Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3
 virtual substrates

Stoffel, M.; Zhang, J.; Schmidt, O. G.

Item

ITEM ACTIONSEXPORT

Add to Basket

Local TagsRelease HistoryDetailsSummary

Released

Journal Article

Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si_0.7Ge_0.3 virtual substrates

MPS-Authors

/persons/resource/persons280560

Stoffel, M.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280713

Zhang, J.
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;
Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280485

Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

External Resource

No external resources are shared

Fulltext (restricted access)

There are currently no full texts shared for your IP range.

Fulltext (public)

There are no public fulltexts stored in PuRe

Supplementary Material (public)

There is no public supplementary material available

Citation

Stoffel, M., Zhang, J., & Schmidt, O. G. (2006). Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si_0.7Ge_0.3 virtual substrates. IEICE Transactions on Electronics, E89-C(7), 921-925.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FC02-4

Abstract

We present room temperature current voltage characteristics from SiGe
interband tunneling diodes epitaxially grown on highly resistive
Si(001) substrates. In this case, a maximum peak to valley current
ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe
tunnel diode with a strained Si transistor lead us to investigate the
growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual
substrates. A careful optimization of the layer structure leads to a
maximum PVCR of 1.36 at room temperature. The latter value can be
further increased to 2.26 at 3.7 K. Our results demonstrate that high
quality SiGe interband tunneling diodes can be realized, which is of
great interest for future memory and high speed applications.