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Journal Article

Indirect excitons and double electron-hole layers in a wide single GaAs/AlGaAs quantum well in a strong electric field

MPS-Authors
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Solov'ev,  V. V.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Kukushkin,  I. V.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Smet,  J.
Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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von Klitzing,  K.
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Dietsche,  W.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Solov'ev, V. V., Kukushkin, I. V., Smet, J., von Klitzing, K., & Dietsche, W. (2006). Indirect excitons and double electron-hole layers in a wide single GaAs/AlGaAs quantum well in a strong electric field. JETP Letters, 83(12), 553-557.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FC48-6
Abstract
The recombination spectra of indirect excitons and double electron-hole
layers in a wide single quantum well in an electric field are studied.
It is found that electrons and holes in the wide well become spatially
separated in a sufficiently strong electric field. This leads to a
substantial reorganization of the radiative recombination spectrum and
to a significant increase in the carrier lifetime. It is shown that the
total charge of the electron-hole system can be changed by varying the
photoexcitation frequency and the applied electric field, thus passing
from the neutral case of indirect excitons to the case of charged
double electron-hole layers. The concentration of excess carriers in
the well is measured as a function of the electric field strength. The
behavior of the excited states of indirect heavy-hole and light-hole
excitons is studied for a neutral excitonic system in a strong electric
field. It is shown that the electric-field dependences allow the
excited states of indirect excitons with a light hole to be
distinguished from the excited states with a heavy hole.