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Journal Article

Influence of near-resonant self-phase modulation on pulse propagation in semiconductors

MPS-Authors
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Höner zu Siederdissen,  T.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Nielsen,  N. C.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

/persons/resource/persons280193

Kuhl,  J.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;

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Giessen,  H.
Former Research Groups, Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Höner zu Siederdissen, T., Nielsen, N. C., Kuhl, J., & Giessen, H. (2006). Influence of near-resonant self-phase modulation on pulse propagation in semiconductors. Journal of the Optical Society of America B, 23(7), 1360-1370.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FC4C-2
Abstract
We give a detailed analysis of the influence of near-resonant
self-phase modulation on subpicosecond pulse propagation through bulk
GaAs at low temperature. We cover the dependence of the pulse
characteristics on the propagation length, the input pulse intensity,
the focusing into the sample, and the detuning from the band edge.
Numerical simulations based on the nonlinear Schrodinger equation are
compared with the experimental observations. Phase-resolved
measurements characterize the evolution of the pulse phase during
propagation. All experiments are based on a fast-scanning technique
that ensures high signal-to-noise ratios. (c) 2006 Optical Society of
America