Influence of point defects on the optical properties of self-assembled Ge/Si 
hut clusters

Nguyen-Duc, T. K.; Le Thanh, V.; Yam, V.; Boucaud, P.; Bouchier, D.; Schmidt, O. G.; Derrien, J.

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Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters

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Schmidt, O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Nguyen-Duc, T. K., Le Thanh, V., Yam, V., Boucaud, P., Bouchier, D., Schmidt, O. G., et al. (2006). Influence of point defects on the optical properties of self-assembled Ge/Si hut clusters. Thin Solid Films, 508(1-2), 207-212.

Cite as: https://hdl.handle.net/21.11116/0000-000E-FC4A-4

Abstract

The kinetic formation of self-assembled Ge/Si hut clusters grown by
ultra-high vacuum chemical-vapor deposition has been investigated by
means of reflection high-energy electron diffraction, atomic force
microscopy and photo luminescence spectroscopy. We show that point
defects that are induced in the epilayers grown at substrate
temperatures below 525 degrees C greatly influence the optical
properties of Ge/Si hut clusters. We have investigated two approaches
of sample annealing in order to remove point defects while minimizing
Ge/Si intermixing: a long annealing at the growth temperature and a
flash annealing at high temperatures for a very short period of time.
The obtained results indicate that a well-controlled flash annealing
for a very short period of time is efficient for removing point defects
while minimizing Ge/Si intermixing. We have then defined a processing
window to obtain proper photoluminescence signature of hut clusters,
which is a well-defined gaussian band located at the energy range
between 800 and 900 meV. Our experiments also illustrate a correlation
between the increase of Ge/Si intermixing and the evolution of the
optical properties from a quantum-dot to a quantum-well behavior. (c)
2005 Elsevier B.V. All rights reserved.