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Journal Article

InGaAs/GaAs/alkanethiolate radial superlattices

MPS-Authors
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Deneke,  Ch.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;

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Zschieschang,  U.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Klauk,  H.
Research Group Organic Electronics (Hagen Klauk), Max Planck Institute for Solid State Research, Max Planck Society;

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Schmidt,  O. G.
Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society;
Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society;
Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society;
Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society;

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Citation

Deneke, C., Zschieschang, U., Klauk, H., & Schmidt, O. G. (2006). InGaAs/GaAs/alkanethiolate radial superlattices. Applied Physics Letters, 89(26): 263110.


Cite as: https://hdl.handle.net/21.11116/0000-000E-FC24-E
Abstract
A radial InGaAs/GaAs/1-hexadecanethiol superlattice is fabricated by
the roll-up of a strained InGaAs/GaAs bilayer passivated with a
molecular self-assembled monolayer. The technique allows the formation
of multiperiod inorganic/organic hybrid heterostructures. The authors
investigate the radial superlattices in a detailed transmission
electron microscopy study. The structure consists of 11 tightly bonded
semiconductor/organic layers with thicknesses and chemical compositions
accurately controlled by epitaxial growth and self-assembly. Their
chemical analysis reveals that neither any detectable oxygen
contamination nor amorphization is present at the superlattice
interfaces. (c) 2006 American Institute of Physics.